汇报标题(中文)：Pt/TaOx/Pt 器件的单极型阻变个性
汇报人姓名：刘春莉
汇报功夫：2014-06-27 09:00
汇报地址：耽搁校区资料所三楼会议室
主办单元：资料学院
汇报内容简介：Resistance switching means to regulate the resistance of a device using a bias voltage or current. Resistance switching has been observed in most of oxide materials, and recently attracted a lot of research attention as a promising candidate for developing the universal memory devices. In this work, we report the unipolar resistance switching properties of Pt/TaOx/Pt structures. The TaOx thin film was deposited using pulsed laser deposition, and the device size is about 90 um. Depending on the substrate temperature used during the deposition, the composition of the TaOx thin film showed dramatic changes, which results in different current-voltage characteristics. Regarding the unipolar resistance switching observed in Pt/TaOx/Pt, we analyzed forming free switching and forming required switching devices. Our results showed for the first time that in addition to the difference in forming process, the conducting filament formation, shape, and evolution process are also quite different.
汇报人简介：刘春莉博士诞生于黑龙江省绥化市。1990年考入清华大学电机工程系。1995年和1998年获得学士和硕士学位。1998年9月进入美国密苏里州华盛顿大学电机工程系，2002年获得博士学位。2005年在韩国首尔大学物理系起头博士后钻研工作，钻研方向为激光脉冲法的ZnO薄膜成长和阻变影象体的机造钻研。2009年进入韩国表国语大学物理系至此刻，任讲师，助教授，和副教授。此刻的重要钻研方向为阻变影象体和磁性纳米资料。
汇报人单元：韩国表国语大学物理系
